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electron Tube Data sheets - 6
USA USA USA US A US A US A US A US A US A US A US A US A Authority US United States Prior art keywords photocathode gallium arsenide electron approximately gallium Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. TV tube, 43cm diagonal, electrostatic focusing, magnetic deflection, white fluorescence, tetrode system, degrees deflection angle QQ44 Identical to QQ44, except with metal-backed screen. Feb 17, · TABLE OF CONTENTS INTRODUCTION 5 SECTION 1 Cross Reference of American Receiving Tubes 7 SECTION 2 Industrial Substitutes For Receiving Tubes 55 SECTION 3 European Substitutes For American Types 59 SECTION 4 American Substitutes For European Types 67 SECTION 5 Picture Tube Substitutes 79 Digitized by blogger.com:
Electron tube cross reference pdf download
Jun J. In particular, it relates to a p-conductivity-type semiconductor photocathode or electron emitter activated with an alkali metal.
An alkali metal is to be understood to mean herein also an alkali metaloxygen combination constituting a substance of low work function. For a photocathode of the composition Cs Sb, for instance, the red boundary lies well over A. For a photocathode of the composition Na KSb-Cs, the red boundary extends further out to approximately A. The red boundary consequently does not provide an absolute value for the sensitivity at that boundary. We have previously made some investigations on the photoelectric emission from p-type silicon, where we found that the red boundary of heavily-doped p-conducting silicon lies at approximately A.
This is reported in Philips Research Reports, 17, The main object of our invention is to provide improved photocathodes which also have a favorable red boundary. According to our invention, the photocathode comprises an alkali-metal-activated, heavily-doped, p-conductivity type IIIV compound or mixed crystals of such compounds with an energy gap lying between 1.
As usual, an I'IIV compound is understood to mean a practically equiatomic intermetallic compound of one of the elements of the third column of the periodical system, viz. In thecase of mixed crystals, the quantity of Electron tube cross reference pdf download atoms present is substantially equal to that of the V atoms. According to a further feature of our invention, this AIII-BV compound preferably consists of gallium arsenide having an acceptor concentration of at least 1X10 per cm.
The maximum concentration amounts to approximately 1 'l0 A photocathode is thus obtained whose maximumquantum efficiency is at least equal to that of the known red-sensitive cathodes, and moreover the red boundary lies at a considerably greater wavelength than in the case of the known photocathodes.
Still further, as a result of the abrupt rise of the sensitivity curve at the long-wave or red end, the overall sensitivity to white light is increased. A preferred composition of our new photocathode is cesium-activated gallium arsenide containing 4X10 zinc atoms per cm.
The red boundary then lies upwards of A. It is also possible to incorporate in the semiconductor other acceptor elements which produce p-conductivity in gallium arsenide in addition to the zinc. Examples of other acceptor elements are cadmium, mercury, or tellurium.
A preferred mixed crystal of the invention comprises gallium arsenide with at the most a few percent, viz. The invention will now be described more fully with reference to the drawing, in which FIGS. As is well known electron tube cross reference pdf download the art, there are various kinds of electron tubes or devices that employ photocathodes. These include photocells, photomultipliers, image intensifiers, iconoscopes, orthicons, and others.
In most cases, the photocathode is mounted within an envelope, which is usually evacuated, in a position to receive the energizing photons of the incident light or radiation.
The electron e-missive part of the photocathode generally borders the evacuated space and emits electrons into it, which are collected by an anode or collecting electrode positioned a small distance away. The cathode and anode are connected across a source of potential and load in an external circuit. Where the photocathode is a crystal, the emissive surface may be a surface formed by cleaving the monocrystal along a crystal plane in a high vacuum or in air.
Or the emissive surface may be formed by evaporating the material to form a thin layer on a conductive support. The alkali-metal activation, usually cesium, which has the lowest work function, is done in the conventional manner. A source of cesium is provided and cesium evaporated within the tube so as to form a deposit on the emissive surface of the cathode.
Generally sufficient cesium is deposited until the photocathode exhibits a maximum sensitivity, which is usually achieved with an approximately monoatomic layer of the cesium, electron tube cross reference pdf download. It comprises a movable metal bellows 2 secured in a vacuum-tight manner to a quartz bulb 1.
This metal part 2 supports a steel knife 3 by means of which part of a gallium arsenide monocrystal 4 is severed to expose a pure gallium arsenide surface. From a source not shownwhich may be of the type described in our previously-mentioned paper, an approximately monoatomic cesium layer 5 is applied to this freshly-cleaved surface by vaporization.
A plate 6 serves as an anode. Upon exposure to radiation through the bulb 1, electrons are emitted from the cathode 4, 5, electron tube cross reference pdf download. This may -be done as follows.
A fine granulated mixture of doped gallium arsenide and gallium ph-osphide is fed, in a good vacuum, into a heated tantalum crucible such that it immediately evaporates. This technique is known in the art as flush evaporation. The molybdenum substrate 8 is held at a temperature of about C. Afterwards, an approximately monoatomic cesium layer is applied to the gallium arsenide layer 9 to produce the finished cathode. The anode is denoted by In the conventional way, the tube is also provided with a plurality of multiplier or dynode electrodes 13 and an anode 14 which constitute the remainder of the electrode system.
Of the remaining electrodes, only the thermionic cathode is shown. In the graph, the quantum efficiencies are plotted along the ordinate as a function of the wavelength of the exciting light in A. It is clearly apparent that the gallium arsenide photocathode of the invention has a particularly favorable quantum efficiency, a very long-wave red boundary and a steeply ascending sensitivity curve, electron tube cross reference pdf download.
While we have described our invention in connection with specific embodiments and applications, other modifications thereof will be readily apparent to those skilled in this art without departing from the spirit and scope of the invention as defined in the appended claims. A photocathode as set forth in claim 3 wherein the acceptor is selected from the group consisting of zinc, cadmium, tellurium and mercury. A photocathode as set forth in claim 1 wherein the material is gallium arsenide with no electron tube cross reference pdf download than 10 percent of gallium phosphide electron tube cross reference pdf download gallium antimonide.
A photocathode as set forth in claim 1 wherein the photoemissive portion is a cleaved surface of a monocrystal. A photocathode as set forth in claim 1 wherein the photoemissive portion is a vapor deposited layer. What is claimed is: 1. An electron tube containing a photocathode as delined in claim 1. USA en. ATB en. BEA en. CHA en, electron tube cross reference pdf download. DEB en. DKB en. ESA1 en. GBA en. NLB en.
SEB en. Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency. Activating method for cesium activated iii-v compound photocathode using rare gas bombardment.
Negative effective electron affinity emitters with drift fields using deep acceptor doping. Method of manufacturing a non-thermally emitting electrode for an electric discharge tube, electron tube cross reference pdf download.
Alkali metal generating agent, alkali metal generator, photoelectric surface, secondary electron emission surface, electron tube, method for manufacturing photoelectric surface, method for manufacturing secondary electron emission surface, and method for manufacturing electron tube. NLA en. Charge storage device with pn junction diode array target having semiconductor contact pads.
Electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode.
CNC en. EPA2 en. Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction. Bell et al. EPB1 en. EPA1 en. Martinelli et al. The application of semiconductors with negative electron affinity surfaces to electron emission devices.
Powering a 1955 IBM 705 Vacuum Tube Logic Module
, time: 16:37Electron tube cross reference pdf download
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